Time-averaging within the excited state of the nitrogen-vacancy centre in diamond
نویسنده
چکیده
The emission intensity of diamond samples containing nitrogenvacancy centres are measured as a function of magnetic field along a 〈111〉 direction for various temperatures. At low temperatures the responses are sample and stress dependent and can be modeled in terms of the previous understanding of the E excited state fine structure which is strain dependent. At room temperature the responses are largely sample and stress independent, and modeling involves invoking a strain independent excited state with a single zero field splitting of 1.42 GHz. The change in behaviour is attributed to a temperature dependent averaging process over the components of the excited state orbital doublet. It decouples orbit and spin and at high temperature the spin levels become independent of any orbit splitting. Thus the models can be reconciled and the parameters for low and high temperatures are shown to be consistent. PACS numbers: 42.50.Ct, 42.50.Ex, 42.62.Fi, 61.72.jn, 71.70.Ej, 71.70.Fk, 76.30.Mi,
منابع مشابه
Spin-flip and spin-conserving optical transitions of the nitrogen-vacancy centre in diamond
We map out the first excited state sublevel structure of single nitrogen-vacancy (NV) colour centres in diamond. The excited state is an orbital doublet where one branch supports an efficient cycling transition, while the other can simultaneously support fully allowed optical Raman spin-flip transitions. This is crucial for the success of many recently proposed quantum information applications ...
متن کاملA robust scanning diamond sensor for nanoscale imaging with single nitrogen-vacancy centres.
The nitrogen-vacancy defect centre in diamond has potential applications in nanoscale electric and magnetic-field sensing, single-photon microscopy, quantum information processing and bioimaging. These applications rely on the ability to position a single nitrogen-vacancy centre within a few nanometres of a sample, and then scan it across the sample surface, while preserving the centre's spin c...
متن کاملElectron–phonon processes of the silicon-vacancy centre in diamond
We investigate phonon induced electronic dynamics in the ground and excited states of the negatively charged silicon-vacancy (SiV−) centre in diamond. Optical transition line widths, transition wavelength and excited state lifetimes are measured for the temperature range 4 K–350 K. The ground state orbital relaxation rates are measured using time-resolved fluorescence techniques. A microscopic ...
متن کاملExcited-state spectroscopy of single NV defect in diamond using optically detected magnetic resonance
Using pulsed optically detected magnetic resonance techniques, we directly probe electron-spin resonance transitions in the excited-state of single Nitrogen-Vacancy color centers in diamond. Unambiguous assignment of excited state fine structure is made, based on changes of NV defect photoluminescence lifetime. This study provides significant insight into the structure of the emitting E excited...
متن کاملOptical signatures of silicon-vacancy spins in diamond.
Colour centres in diamond have emerged as versatile tools for solid-state quantum technologies ranging from quantum information to metrology, where the nitrogen-vacancy centre is the most studied to date. Recently, this toolbox has expanded to include novel colour centres to realize more efficient spin-photon quantum interfaces. Of these, the silicon-vacancy centre stands out with highly desira...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2009